Description
- Transistors silicon KP301B (2P301B) analogue 2N4038 USSR 4 pcs
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Transistors KP301B (2P301B) planar silicon insulated-gate field-induced and the p-channel type. Designed for use in low-noise front end amplifiers, nonlinear small-signal circuits, stages with a high input impedance. Available in metal packages with flexible wires. Type of device is indicated on the package. Mass transistor is not more than 0.7 g The main technical characteristics of the transistor KP301B (2P301B): Structure transistor with an insulated gate, a p-channel induced; RC max - power dissipation Drain-Source: 200 mW; Uzi far - threshold voltage of the transistor - the voltage between the gate and the source: 2.7 ... 5,4; U ds max - The maximum drain-source voltage: 20 V; Uzi max - The maximum gate-source voltage: 30 V; Ic - Drain Current (DC): 15 mA; Ic early - Initial Drain Current: 0.5 mA; S - Slope: 1 ... 2.6 mA / V; S11i - The input capacitance of the transistor - the capacitance between the gate and the source: not more than 3.5 pF; S12i - Capacity feedback in the common-source with a short circuit at the input of alternating current: less than 1 pF; S22i - The output capacitance of the transistor - the capacitance between the drain and source: not more than 3.5 pF; Rm - Noise Transistor: not more than 9.5 dB at 100 MHz